| PART |
Description |
Maker |
| APT2X60D30J APT2X61D30J |
DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES 300V 60A
|
Advanced Power Technology
|
| APT2X101D120J APT2X100D120J |
DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES 1200V 100A
|
ADPOW[Advanced Power Technology]
|
| APT2X61D20J APT2X60D20J |
DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES 200V 60A
|
Advanced Power Technology
|
| APT2X31D20J APT2X30D20J |
CONNECTOR ACCESSORY 双超快软恢复整流二极
DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES 200V 30A
|
Advanced Power Technology, Ltd.
|
| STE100N20 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE
|
STMicroelectronics
|
| ACTS74HMSR-02 |
Dual D Type Flip Flop with Set and Reset, Advanced Logic, CMOS; Temperature Range: -55°C to 125°C; Package: Die (Military Visual) ACT SERIES, DUAL POSITIVE EDGE TRIGGERED D FLIP-FLOP, COMPLEMENTARY OUTPUT, UUC14
|
Intersil, Corp.
|
| STE36N50 36N50DA |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE N沟道增强型功率MOS器件中的ISOTOP封装
IC SHUNT REG ADJ 1.0% SOT-25
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| APT100GT120JRDQ4 |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 60;
|
MICROSEMI POWER PRODUCTS GROUP
|
| 15KCD16A |
Transient suppressor CELLULAR DIE PACKAGE
|
Microsemi
|
| APT75GN120J |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 68; 124 A, 1200 V, N-CHANNEL IGBT
|
Microsemi, Corp.
|
| OM6233SS OM6227SS OM6233SSV OM6231SS OM6232SS OM62 |
1000V Dual N-Channel MOSFET in a S-6D package
500V Dual N-Channel MOSFET in a S-6D package
400V Dual N-Channel MOSFET in a S-6D package
500V Dual N-Channel MOSFET in a S-6E package
1000V Dual N-Channel MOSFET in a S-6E package
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
10 A, 1000 V, 1.3 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HERMETIC SEALED, S-6D, SIP-6
400V Dual N-Channel MOSFET in a S-6E package 400V双N沟道MOSFET的在一个S - 6E条包
10 A, 1000 V, 1.3 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HERMETIC SEALED, S-6E, SIP-6
|
International Rectifier
Electronic Theatre Controls, Inc.
Atmel, Corp.
|
| SOT545-3 |
plastic thermal enganced thin quad flat package; 48 leads; body 7 x 7 x 1 mm; exposed die pad
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
